lauantai 22. joulukuuta 2012

Kiinalaiset kehittivät 22nm transistorin

Chinese scientists have made a breakthrough in cracking a key technology in constructing integrated circuits (IC), news which is expected to help pull up global market shares of domestic IC producers.
The Institute of Microelectronics of the Chinese Academy of Sciences (IMECAS) announced on Friday that it has developed metal oxide semiconductor field effect transistors with a gate length of 22 nanometers, a preliminary step to obtaining electronic circuits with a width of just 22 nonometers.
Instead of turning to traditional materials such as silica and polysilicon, researchers tried high-k/metal-gate materials in making the device to save cost and ensure the device's "world-class performance and low power dissipation," according to the IMECAS.
For many years China was denied access to leading-edge electronic manufacturing technology from external sources under CoCom export regulations and the follow-on Wassennaar Arrangement. However, in recent years China has gradually been catching up through a combination of licensing of external processes and self-education. China's indigenous foundry chip maker Semiconductor Manufacturing International Corp. (Shanghai, China) is able to offer a commercial 40-nm CMOS manufacturing process.

Kiina on olllut pitkälti länsimaisen valmistusprosessiosaamisen varassa. Kiina haluaa kuitenkin päästä lopullisesti eroon länsimaisesta valvonnasta.

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