Chinese scientists have made a breakthrough in cracking a key technology in constructing integrated circuits (IC), news which is expected to help pull up global market shares of domestic IC producers.http://news.xinhuanet.com/english/sci/2012-12/21/c_132056056.htm
The Institute of Microelectronics of the Chinese Academy of Sciences (IMECAS) announced on Friday that it has developed metal oxide semiconductor field effect transistors with a gate length of 22 nanometers, a preliminary step to obtaining electronic circuits with a width of just 22 nonometers.
Instead of turning to traditional materials such as silica and polysilicon, researchers tried high-k/metal-gate materials in making the device to save cost and ensure the device's "world-class performance and low power dissipation," according to the IMECAS.
For many years China was denied access to leading-edge electronic manufacturing technology from external sources under CoCom export regulations and the follow-on Wassennaar Arrangement. However, in recent years China has gradually been catching up through a combination of licensing of external processes and self-education. China's indigenous foundry chip maker Semiconductor Manufacturing International Corp. (Shanghai, China) is able to offer a commercial 40-nm CMOS manufacturing process.http://www.eetimes.com/electronics-news/4403848/China-makes-its-own-22-nm-transistor
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